VP0106中文资料

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VP0104VP0106VP0109

P-Channel Enhancement-ModeVertical DMOS FETs

Ordering Information

BVDSS /BVDGS-40V-60V-90V

RDS(ON)(max)8.0?8.0?8.0?

ID(ON)(min)-0.5A-0.5A-0.5A

Order Number / PackageTO-92VP0104N3VP0106N3VP0109N3

Die?——VP0109ND

Features

?Free from secondary breakdown?Low power drive requirement?Ease of paralleling

?Low CISS and fast switching speeds?Excellent thermal stability?Integral Source-Drain diode?High input impedance and high gain?Complementary N- and P-channel devices

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize avertical DMOS structure and Supertex’s well-proven silicon-gatemanufacturing process. This combination produces devices withthe power handling capabilities of bipolar transistors and with thehigh input impedance and positive temperature coefficient inher-ent in MOS devices. Characteristic of all MOS structures, thesedevices are free from thermal runaway and thermally-inducedsecondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide rangeof switching and amplifying applications where high breakdownvoltage, high input impedance, low input capacitance, and fastswitching speeds are desired.

Applications

?Motor controls?Converters?Amplifiers?Switches

?Power supply circuits

?Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Package Option

S G DAbsolute Maximum Ratings

Drain-to-Source VoltageDrain-to-Gate VoltageGate-to-Source Voltage

Operating and Storage TemperatureSoldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

07/08/02

TO-92BVDSSBVDGS± 20V

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate \indemnification insurance agreement.\workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to theSupertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.1

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VP0104/VP0106/VP0109

Thermal Characteristics

PackageTO-92

ID (continuous)*

-0.25A

ID (pulsed)-0.8A

Power Dissipation@ TC = 25°C

1.0W

θjc°C/W125

θja°C/W170

IDR*-0.25A

IDRM-0.8A

* ID (continuous) is limited by max rated Tj.

Electrical Characteristics (@ 25°C unless otherwise specified)

SymbolBVDSS

Drain-to-SourceBreakdown Voltage

VGS(th)?VGS(th)IGSSIDSS

Gate Threshold Voltage

Change in VGS(th) with TemperatureGate Body Leakage

Zero Gate Voltage Drain Current

Parameter

VP0109VP0106VP0104

Min-90-60-40-1.5

5.8-1.0

-3.56.5-100-10

VmV/°CnAμA

VGS = VDS, ID = -1.0mAID = -1.0mA, VGS = VDSVGS = ±20V, VDS = 0VVGS = 0V, VDS = Max RatingVGS = 0V, VDS = 0.8 Max RatingTA = 125°C

VGS = -5V, VDS = -25VVGS = -10V, VDS = -25VVGS = -5V, ID = -0.1AVGS = -10V, ID = -0.5AVGS = -10V, ID = -0.5AVDS = -25V, ID = -0.5AVGS = 0V, VDS = -25Vf = 1 MHz

V

ID = -1.0mA, VGS = 0V

Typ

Max

Unit

Conditions

-1 mAID(ON)RDS(ON)?RDS(ON)GFSCISSCOSSCRSStd(ON)trtd(OFF)tfVSDtrr

ON-State Drain CurrentStatic Drain-to-SourceON-State Resistance

Change in RDS(ON) with TemperatureForward TransconductanceInput Capacitance

Common Source Output CapacitanceReverse Transfer CapacitanceTurn-ON Delay TimeRise Time

Turn-OFF Delay TimeFall Time

Diode Forward Voltage DropReverse Recovery Time

150-0.15-0.50

-0.25-1.2116.00.55190452234384-1.2400

603086101210-2.0

VnsnspF

158.01.0

A?%/°Cm

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)2.All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

0V10%INPUT-10VPULSEGENERATOR90%t(ON)Rgent(OFF)tr90%td(OFF)90%tFtd(ON)0VINPUTOUTPUTVDD10%2

?VDD = -25VID = -0.5ARGEN = 25?ISD = -1.0A, VGS = 0VISD = -1.0A, VGS = 0V

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Typical Performance Curves

Output Characteristics-2.0-1.6)VsGS = -10Ve-1.2repma( D-0.8-8VI-0.4-6V0-4V0-10-20-30-40-50VDS (volts)Transconductance vs. Drain Current250VDS = -25VTA= -55°C200TA = 25°C)sneTmA = 125°Cei150sillim( SF100G5000-0.2-0.4-0.6-0.8-1.0ID (amperes)Maximum Rated Safe Operating Area-10)-1.0serepma( DTO-92(DC)I-0.1T°C-0.01C = 25-0.1-1.0-10-100VDS (volts)VP0104/VP0106/VP0109

Saturation Characteristics-1.0VGS = -10V-0.8)s-8Ve-0.6repma( D-0.4I-6V-0.20-4V0-2-4-6-8-10VDS (volts)Power Dissipation vs. Case Temperature2.0)sTO-92ttaw1.0( DP00255075100125150TC (°C)Thermal Response Characteristics1.0)dezi0.8lamron( e0.6cnatsise0.4R lamre0.2TO-92hTPD = 1WT0C = 25°C0.0010.010.1110tp (seconds)3

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VP0104/VP0106/VP0109

Typical Performance Curves

BVDSSDSS Variation with Temperature1.1050On-Resistance vs. Drain Current1.0640VGS = -5VVGS = -10VBVDSS (normalized)RDS(ON) (ohms)1.02300.98200.94100.90-5005010015000-0.3-0.6-0.9-1.2-1.5Tj (°C)Transfer Characteristics-1.01.6ID (amperes)V(th) and RDS Variation with Temperature1.6TA = -55°C-0.8VDS = -25VTA = 25°CRDS(ON) @ -10V, -0.5A 1.4VGS(th) (normalized)RDS(ON) @ -5V, 0.1A1.21.4-0.6V(th) @ -1.0mA 1.01.2-0.4TA = 125°C1.00.80.8-0.200-2-4-6-8-100.6-50050100150VGS (volts)Capacitance vs. Drain-to-Source Voltage100-10Tj (°C)Gate Drive Dynamic Characteristicsf = 1MHz-875VDS = -10V70 pFC (picofarads)VGS (volts)-6VDS = -40V 70 pF50CISS-425COSS-2CRSS00-10-20-30-400045pF0.20.40.60.81.0VDS (volts)QG (nanocoulombs)?2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.4

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 ? FAX: (408) 222-4895

www.supertex.com

RDS(ON) (normalized)07/08/02

ID (amperes)